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| SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 FEATURES * 100 Volt VDS * RDS(on)= 10 7 ZVN3310F S D G COMPLEMENTARY TYPE PARTMARKING DETAIL - ZVP3310F MF SOT23 SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 100 100 2 20 330 -55 to +150 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb =25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb =25C Operating and Storage Temperature Range UNIT V mA A V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS ID(on) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf 3 typ 5 typ 4 typ 5 typ 100 40 15 5 5 7 6 7 500 10 100 0.8 2.4 20 1 50 MAX. UNIT CONDITIONS. V V nA A A mA mS pF pF pF ns ns ns ns V DD 25V, I D =500mA V DS =25V, V GS =0V, f=1MHz I D =1mA, V GS =0V I D =1mA, V DS = V GS V GS = 20V, V DS =0V V DS =100V, V GS =0 V DS =80V, V GS =0V, T=125C(2) V DS =25V, V GS =10V V GS =10V, I D =500mA V DS =25V, I D =500mA (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3 - 396 ZVN3310F TYPICAL CHARACTERISTICS ID(On) -On-State Drain Current (Amps) 160 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 VGS= 10V 9V 8V 7V 6V 5V 4V 3V gfs-Transconductance (mS) VDS= 25V 120 80 40 0 0 0.2 0.4 0.6 0.8 1.0 1.2 ID- Drain Current (Amps) VDS - Drain Source Voltage (Volts) Transconductance v drain current Saturation Characteristics VDS= 20V 50V ID=0.6A VGS-Gate Source Voltage (Volts) 50 16 14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 80V C-Capacitance (pF) 40 30 Ciss 20 10 0 0 10 20 30 40 Coss Crss 50 1.0 1.2 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage RDS(ON) -Drain Source Resistance () 100 2.4 Normalised RDS(on) and VGS(th) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 ID=-0.5A 10 ID= 1A 0.5A 0.2A Dr e rc ou -S ain s Re ist ce an RD ) on S( Gate Thres hold Volta ge VGS(th) 1 1 10 20 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS-Gate Source Voltage (Volts) T-Temperature (C) On-resistance vs gate-source voltage Normalised RDS(on) and VGS(th) vs Temperature 3 - 397 |
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